18589845. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract (Tokyo Electron Limited)

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Organization Name

Tokyo Electron Limited

Inventor(s)

Tatsuya Yamaguchi of Tokyo (JP)

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18589845 titled 'SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

The patent application describes a substrate processing apparatus that can accommodate multiple substrates for processing.

• Gas supply nozzle supplies gas inside the processing container.
• External heater heats the substrates from outside the container.
• Internal heater, independent of the gas supply nozzle, is provided inside the container to heat the substrates from a lateral side.

Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production

Problems Solved: - Efficient heating of multiple substrates - Uniform processing of substrates - Enhanced control over processing conditions

Benefits: - Improved processing efficiency - Consistent quality of processed substrates - Reduced processing time and costs

Commercial Applications: Title: Advanced Substrate Processing Apparatus for Semiconductor Manufacturing This technology can be used in semiconductor fabrication facilities to enhance production processes, leading to higher yields and improved product quality.

Prior Art: Researchers can explore prior patents related to substrate processing apparatuses, gas supply systems, and heating mechanisms in semiconductor manufacturing.

Frequently Updated Research: Researchers in the field of materials science and semiconductor processing may be conducting studies on optimizing substrate heating methods for improved manufacturing outcomes.

Questions about Substrate Processing Apparatus: 1. How does the internal heater in the processing container contribute to the overall efficiency of substrate processing? 2. What are the potential challenges in integrating this advanced heating system into existing semiconductor manufacturing processes?

Original Abstract Submitted

A substrate processing apparatus includes a processing container that accommodates a plurality of substrates in an inside thereof to perform a substrate processing on the plurality of substrates, a gas supply nozzle that supplies a gas to the inside of the processing container, and an external heater that heats the plurality of substrates from an outside of the processing container. The substrate processing apparatus further includes an internal heater that is provided independently of the gas supply nozzle in the inside of the processing container and extends at a lateral side of the plurality of substrates in a direction in which the plurality of substrates are arranged to heat the plurality of substrates.