18589784. GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON AMORPHOUS SUBSTRATE simplified abstract (Japan Display Inc.)
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON AMORPHOUS SUBSTRATE
Organization Name
Inventor(s)
Masumi Nishimura of Tokyo (JP)
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON AMORPHOUS SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18589784 titled 'GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON AMORPHOUS SUBSTRATE
The abstract of a patent application describes a gallium nitride-based semiconductor device with specific layers and arrangements.
- The device includes an amorphous substrate, a conductive alignment layer, a gallium nitride-based semiconductor layer, and an auxiliary electrode layer.
- The conductive alignment layer is on the amorphous substrate, with the gallium nitride-based semiconductor layer on top.
- The auxiliary electrode layer is in contact with the conductive alignment layer and is positioned around the periphery portion of the conductive alignment layer.
Potential Applications: - Power electronics - LED lighting - High-frequency communication devices
Problems Solved: - Improved performance of semiconductor devices - Enhanced conductivity and alignment of layers
Benefits: - Higher efficiency - Better reliability - Increased functionality
Commercial Applications: Title: Gallium Nitride-Based Semiconductor Devices: Commercial Uses and Market Implications This technology can be utilized in various industries such as telecommunications, automotive, and consumer electronics, leading to more advanced and efficient products.
Questions about Gallium Nitride-Based Semiconductor Devices: 1. How does the arrangement of layers in this semiconductor device contribute to its overall performance? 2. What are the key advantages of using gallium nitride in semiconductor devices compared to other materials?
Original Abstract Submitted
A gallium nitride-based semiconductor device includes an amorphous substrate, a conductive alignment layer on the amorphous substrate, a gallium nitride-based semiconductor layer on the conductive alignment layer, and an auxiliary electrode layer in contact with the conductive alignment layer. The auxiliary electrode layer is arranged around a periphery portion of the conductive alignment layer.
