GATE ISOLATION STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jia-Chuan You of Taoyuan County (TW)

Chia-Hao Chang of Hsinchu City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Chih-Hao Wang of Hsinchu County (TW)

GATE ISOLATION STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18587622 titled 'GATE ISOLATION STRUCTURE

The semiconductor device described in the abstract consists of a first gate structure, a second gate structure aligned in a specific direction, a first metal layer over the first gate structure, a second metal layer over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure, as well as between the first metal layer and the second metal layer.

The device features a unique design with two gate structures aligned along a specific direction.
The presence of first and second metal layers over the gate structures enhances conductivity and performance.
The gate isolation structure effectively separates the gate structures and metal layers, preventing interference and ensuring proper functionality.

Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits, microprocessors, and memory chips.

Problems Solved: The device addresses issues related to gate structure alignment, metal layer deposition, and isolation between components, improving overall performance and reliability.

Benefits: Enhanced conductivity, improved performance, reduced interference, and increased reliability in semiconductor devices.

Commercial Applications: This technology can be utilized in the production of high-performance electronic devices, contributing to advancements in the semiconductor industry and various electronic applications.

Prior Art: Researchers can explore prior art related to semiconductor device design, gate structures, metal layer deposition, and isolation techniques in semiconductor manufacturing processes.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, gate structure design, metal layer deposition methods, and isolation techniques for improved performance and reliability.

Questions about Semiconductor Device Technology: 1. What are the key features of the semiconductor device described in the abstract? 2. How does the gate isolation structure contribute to the functionality of the device?

Original Abstract Submitted

A semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure as well as between the first metal layer and the second metal layer.