18584900. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seiya Sakakura of Hakusan Ishikawa JP
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18584900 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
According to one embodiment, a method for manufacturing a semiconductor device includes a first process, a second process, and a third process. The first process is performed on a semiconductor member including a first face and a crystal. The first process includes at least one of implanting a first element into a first portion of the semiconductor member from the first face or irradiating the first portion with a particle beam. In the second process, a second element is implanted into a first region of the semiconductor member and is not implanted into a second region of the semiconductor member. The first region and the second region are located between the first face and the first portion. The third process is performed to irradiate the semiconductor member with a first electromagnetic wave from the first face through the first region and the second region, after the second process.