18583109. DISPLAY APPARATUS simplified abstract (Samsung Display Co., Ltd.)
DISPLAY APPARATUS
Organization Name
Inventor(s)
Junhyun Park of Yongin-si (KR)
Hyeongseok Kim of Yongin-si (KR)
Heejean Park of Yongin-si (KR)
DISPLAY APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18583109 titled 'DISPLAY APPARATUS
The abstract of the patent application describes a display apparatus with multiple thin-film transistors, each with different semiconductor layers and gate electrodes. There are bridge metal layers and conductive pattern layers connecting the transistors.
- Simplified Explanation:
- Display apparatus with multiple thin-film transistors - Different semiconductor layers and gate electrodes - Bridge metal and conductive pattern layers connecting transistors
Key Features and Innovation: - Utilizes multiple thin-film transistors with different semiconductor materials - Includes bridge metal layers for electrical connections between transistors - Improves display performance and efficiency
Potential Applications: - High-resolution displays - Flexible displays - Touchscreen devices
Problems Solved: - Enhances display quality - Improves electrical connections between transistors - Increases overall device performance
Benefits: - Higher display resolution - Improved device efficiency - Enhanced user experience
Commercial Applications: - Consumer electronics industry - Display manufacturing companies - Technology research and development firms
Questions about the technology: 1. How does the use of different semiconductor materials in the transistors impact display performance? 2. What are the potential challenges in scaling this technology for mass production?
Frequently Updated Research: - Ongoing studies on optimizing the performance of thin-film transistors in display technology.
Original Abstract Submitted
A display apparatus includes a first thin-film transistor in a display area, and including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor, a second thin-film transistor on the first thin-film transistor, and including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor, a third thin-film transistor on the first thin-film transistor, and including a third semiconductor layer and a third gate electrode, the third semiconductor layer including an oxide semiconductor, a bridge metal layer between the first thin-film transistor and the second thin-film transistor and electrically connected to the first semiconductor layer through a first contact hole, and a first conductive pattern layer on the second gate electrode of the second thin-film transistor, and the bridge metal layer is electrically connected to the first conductive pattern layer through a second contact hole.
