18582070. CARRIER WAFER DEBONDING PROCESS AND METHOD (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
CARRIER WAFER DEBONDING PROCESS AND METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
James June Fan Hsu of New Taipei TW
Ku-Feng Yang of Baoshan Township TW
CARRIER WAFER DEBONDING PROCESS AND METHOD
This abstract first appeared for US patent application 18582070 titled 'CARRIER WAFER DEBONDING PROCESS AND METHOD
Original Abstract Submitted
A method includes forming a first de-bond structure over a first substrate, where forming the first de-bond structure includes depositing a first de-bond layer over the first substrate, depositing a first silicon layer over the first de-bond layer, depositing a second de-bond layer over the first silicon layer, and depositing a second silicon layer over the second de-bond layer, epitaxially growing a first multi-layer stack over the first de-bond structure, bonding the first multi-layer stack to a second multi-layer stack, and performing a first laser annealing process to ablate the first silicon layer and portions of the first de-bond layer and the second de-bond layer in order to de-bond the first substrate from the first multi-layer stack.