18581186. MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL (SAMSUNG ELECTRONICS CO., LTD.)
MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL
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MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL
This abstract first appeared for US patent application 18581186 titled 'MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL
Original Abstract Submitted
A memory device may include a gate electrode, a channel layer spaced apart from the gate electrode, a charge trap layer between the gate electrode and the channel layer, and a two-dimensional material layer arranged between the charge trap layer and the gate electrode. The two-dimensional material layer may include a material having an electron affinity of less than 1 eV.