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18580603. INCREASING DEPOSITION RATES OF OXIDE FILMS (Lam Research Corporation)

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INCREASING DEPOSITION RATES OF OXIDE FILMS

Organization Name

Lam Research Corporation

Inventor(s)

Awnish Gupta of Hillsboro OR (US)

Frank L. Pasquale of Beaverton OR (US)

Adrien Lavoie of Newberg OR (US)

Shiva Sharan Bhandari of Tualatin OR (US)

Pulkit Agarwal of Beaverton OR (US)

Bart Jan Van Schravendijk of Palo Alto CA (US)

INCREASING DEPOSITION RATES OF OXIDE FILMS

This abstract first appeared for US patent application 18580603 titled 'INCREASING DEPOSITION RATES OF OXIDE FILMS

Original Abstract Submitted

Various embodiments include a method for increasing a deposition rate of, for example, an atomic-layer deposition (ALD)-produced film onto a surface of a substrate. In one exemplary embodiment, the method includes placing the substrate in a deposition chamber, introducing a precursor gas into the deposition chamber, evacuating at least a portion of remaining precursor-gas molecules from the deposition chamber, applying a radio-frequency (RF) conversion to the substrate in the deposition chamber, performing a plasma-species RF purge, and introducing a hydrogen (Fh) gas into the deposition chamber during one or more of the operations including introducing the precursor gas into the deposition chamber, evacuating at least the portion of remaining precursor-gas molecules from the deposition chamber, applying the RF conversion step to the substrate in the deposition chamber, and performing the plasma-species RF purge. Other methods are disclosed.

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