18575994. MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
Inventor(s)
Joong Chan Shin of Gyeonggi-do KR
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18575994 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
Disclosed are a memory device and a manufacturing method thereof. The disclosed memory device may include a first substrate structure including a plurality of sense amplifiers (S/A) and a peripheral circuit unit, a second substrate structure bonded to a first surface side of the first substrate structure and including a first cell block including a plurality of first memory cells and a plurality of first bit lines, and a third substrate structure bonded to a second surface side of the first substrate structure and including a second cell block including a plurality of second memory cells and a plurality of second bit lines, wherein each of the plurality of first bit lines and each of the plurality of second bit lines may be commonly connected to each of the plurality of sense amplifiers (S/A).
