18555553. SOLID-STATE IMAGING DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

SOLID-STATE IMAGING DEVICE

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

YASUHIRO Ebihara of KANAGAWA (JP)

SOLID-STATE IMAGING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18555553 titled 'SOLID-STATE IMAGING DEVICE

The patent application describes a solid-state imaging device with a unique structure to improve performance.

• The device includes a first semiconductor layer, a transistor, and an electric field relaxation section.
• The transistor features a fin standing on the main surface of the semiconductor layer, with main electrodes and a channel-forming region.
• A gate insulating film and gate electrode cover the fin to control the flow of electric current.
• The electric field relaxation section is designed to reduce electric field concentration in the device.

Potential Applications: - This technology can be used in digital cameras, smartphones, and other imaging devices. - It may also find applications in medical imaging equipment and security cameras.

Problems Solved: - Helps in improving image quality and reducing noise in imaging devices. - Enhances the overall performance and efficiency of solid-state imaging devices.

Benefits: - Improved image quality and resolution. - Enhanced performance and efficiency. - Reduction in noise levels in captured images.

Commercial Applications: Title: "Advanced Solid-State Imaging Technology for Enhanced Image Quality" This technology can be utilized in consumer electronics, medical imaging devices, surveillance systems, and industrial inspection equipment.

Prior Art: Readers can explore prior patents related to solid-state imaging devices, transistor structures, and electric field relaxation techniques.

Frequently Updated Research: Stay updated on advancements in semiconductor technology, imaging sensors, and signal processing algorithms relevant to solid-state imaging devices.

Questions about Solid-State Imaging Devices: 1. How does the electric field relaxation section contribute to improving image quality? 2. What are the key differences between traditional imaging devices and solid-state imaging devices in terms of performance and efficiency?

Original Abstract Submitted

A solid-state imaging device includes a first semiconductor layer, a transistor, and an electric field relaxation section. The transistor includes: a fin provided to stand on a main surface section of the first semiconductor layer; a first main electrode, a channel-forming region, and a second main electrode that are provided in the fin along a channel length direction; and a gate insulating film and a gate electrode that cover an upper surface and a side surface of the fin to extend over the fin along a channel width direction. The electric field relaxation section is provided in a lower part of the side surface of the fin to relax electric field concentration.