PHOTODETECTION DEVICE AND ELECTRONIC DEVICE

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

PHOTODETECTION DEVICE AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18551671 titled 'PHOTODETECTION DEVICE AND ELECTRONIC DEVICE

Simplified Explanation

The photodetection device described in the patent application includes a first semiconductor layer with a photoelectric conversion unit, an insulating layer on one side of the first semiconductor layer, an electrode pad exposed from the insulating layer, and an insulating ring surrounding the electrode pad.

The device includes a first semiconductor layer with a photoelectric conversion unit.
An insulating layer is laminated on one side of the first semiconductor layer.
An electrode pad is exposed from the insulating layer on the opposite side of the first semiconductor layer.
An insulating ring surrounds the electrode pad in a plan view.

Potential Applications

The technology described in this patent application could be used in various photodetection devices, such as image sensors, photovoltaic cells, and optical communication systems.

Problems Solved

This technology helps suppress an increase in parasitic capacitance of an electrode pad, which can improve the performance and efficiency of photodetection devices.

Benefits

The benefits of this technology include enhanced sensitivity, reduced noise, improved signal-to-noise ratio, and overall better performance of photodetection devices.

Potential Commercial Applications

Potential commercial applications of this technology include digital cameras, smartphones, security cameras, solar panels, and optical sensors.

Possible Prior Art

One possible prior art for this technology could be the use of insulating rings in semiconductor devices to isolate and protect certain components.

Unanswered Questions

How does this technology compare to existing methods of suppressing parasitic capacitance in photodetection devices?

This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages of this new approach.

What specific materials are used in the construction of the insulating layer and insulating ring?

The article does not specify the materials used in the insulating layer and insulating ring, which could be important for understanding the performance and durability of the device.

Original Abstract Submitted

Provided is a photodetection device capable of suppressing an increase in a parasitic capacitance of an electrode pad. A photodetection device includes: a first semiconductor layer that includes a photoelectric conversion unit and has one surface being a light incident surface and another surface being an element formation surface; an insulating layer laminated on a side of the light incident surface of the first semiconductor layer; an electrode pad exposed from a surface of the insulating layer on a side opposite to a surface on a side of the first semiconductor layer in a state where the insulating layer is interposed between the electrode pad and the first semiconductor layer; and an insulating ring that is a ring having an insulating property, penetrating the first semiconductor layer in a thickness direction, and surrounding the electrode pad in a plan view.