SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Inventor(s)

Miyako Kaneko of Nirasaki City, Yamanashi (JP)

Naoko Suzuki of Nirasaki City, Yamanashi (JP)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18546140 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

The substrate processing method and apparatus described in the patent application aim to enhance etching resistance and reduce film stress when forming a carbon-based film on a substrate.

The method involves placing the substrate on a stage, forming a first carbon-based film with a certain stress, forming a second carbon-based film with a different stress, and repeating the process to create a stacked body of the two films with stresses oriented in the same direction but varying intensities.

Key Features and Innovation:

Improved etching resistance in the formed carbon-based film.
Reduction of film stress through the use of multiple layers with varying stress levels.
Stacked body structure enhances the overall durability and performance of the film.

Potential Applications:

Semiconductor manufacturing processes.
Thin film deposition in electronic devices.
Protective coatings in aerospace and automotive industries.

Problems Solved:

Enhanced etching resistance.
Reduced film stress.
Improved overall performance and durability of the carbon-based film.

Benefits:

Increased longevity of the film.
Enhanced reliability in harsh environments.
Improved quality of the substrate processing.

Commercial Applications:

Advanced semiconductor fabrication.
High-performance electronic devices.
Aerospace and automotive coatings industry.

Questions about the technology: 1. How does the method of forming multiple carbon-based films with varying stresses improve the overall performance of the substrate? 2. What specific industries could benefit the most from the enhanced etching resistance and reduced film stress provided by this technology?

Frequently Updated Research: Ongoing research in the field of carbon-based film deposition techniques and their applications in various industries.

Original Abstract Submitted

Provided are a substrate processing method and a substrate processing apparatus that improve an etching resistance and suppress a film stress. A substrate processing method of forming a carbon-based film on a substrate includes: a process of placing the substrate on a stage; a first film forming process of forming a first carbon-based film having a first stress; a second film forming process of forming a second carbon-based film having a second stress; and a third film forming process of repeating the first film forming process and the second film forming process to form a stacked body of the first carbon-based film and the second carbon-based film, wherein the first stress and the second stress are oriented in a same direction, and the first stress and the second stress have different intensities.