18544318. THIN FILM TRANSISTOR (AUO Corporation)
THIN FILM TRANSISTOR
Organization Name
Inventor(s)
THIN FILM TRANSISTOR
This abstract first appeared for US patent application 18544318 titled 'THIN FILM TRANSISTOR
Original Abstract Submitted
A thin film transistor includes a semiconductor layer, a gate insulating layer and a gate. The semiconductor layer has a first heavily doped region, a first lightly doped region, a first intrinsic region, a second lightly doped region, a second intrinsic region, a third lightly doped region and a second heavily doped region. A first conductive pattern of the gate has a first portion, a second portion and an opening portion. The first portion of the first conductive pattern shields the first intrinsic region. The second portion of the first conductive pattern shields the second intrinsic region. The opening portion of the first conductive pattern overlaps the second lightly doped region. A second conductive pattern of the gate covers the first conductive pattern. The second conductive pattern has a first portion and a second portion that are located on two opposite sides of the first conductive pattern.