18543799. Semiconductor Device and Method (Taiwan Semiconductor Manufacturing Co., Ltd.)
Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sung-Feng Yeh of Taipei City TW
Ming-Zhi Yang of Taichung City TW
Semiconductor Device and Method
This abstract first appeared for US patent application 18543799 titled 'Semiconductor Device and Method
Original Abstract Submitted
An embodiment includes a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein. The method also includes forming a redistribution via and a redistribution pad over the first interconnect structure, the redistribution via and the redistribution pad being electrically coupled to at least one of the metallization patterns of the first interconnect structure, the redistribution via and the redistribution pad having a same material composition. The method also includes forming a warpage control dielectric layer over the redistribution pad. The method also includes forming a bond via and a bond pad over the redistribution pad, the bond pad being in the warpage control dielectric layer, the bond via being electrically coupled to the redistribution pad.