SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Organization Name

Inventor(s)

Sung Wook Jung of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18540586 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Original Abstract Submitted

There are provided a semiconductor device and a manufacturing method of a semiconductor device. The semiconductor device includes: a gate stack structure including interlayer insulating layers and conductive layers, which are alternately stacked; a channel structure extending in a vertical direction in the gate stack structure; and memory structures interposed between the conductive layers and the channel structure. Each of the memory structures includes a blocking insulating layer and a charge trap layer, which are sequentially formed on a sidewall of each of the conductive layers. Sidewalls of the interlayer insulating layers, which are in contact with the channel structure, are located on the same line as a sidewall of the charge trap layer, which is in contact with the channel structure, or side portions of the interlayer insulating layers, which are in contact with the channel structure, further protrude as compared with the sidewall of the charge trap layer.