18525322. MAGNETIC MEMORY DEVICES (SAMSUNG ELECTRONICS CO., LTD.)
MAGNETIC MEMORY DEVICES
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MAGNETIC MEMORY DEVICES
This abstract first appeared for US patent application 18525322 titled 'MAGNETIC MEMORY DEVICES
Original Abstract Submitted
A memory device comprising a reference magnetic pattern and a free magnetic pattern sequentially stacked on a substrate; and a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, wherein the reference magnetic pattern includes: a first pinning pattern; a second pinning pattern between the first pinning pattern and the tunnel barrier pattern; and an exchange coupling pattern between the first pinning pattern and the second pinning pattern, the exchange coupling pattern antiferromagnetically coupling the first pinning pattern and the second pinning pattern, wherein the first pinning pattern includes: a first magnetic pattern; and a second magnetic pattern between the first magnetic pattern and the exchange coupling pattern, the first magnetic pattern is a single layer including an alloy of a first ferromagnetic element and a first non-magnetic metal element, and wherein the second magnetic pattern is a single layer including a second ferromagnetic element.