18525198. WORDLINE CONTACT FORMATION FOR NAND DEVICE simplified abstract (Applied Materials, Inc.)
WORDLINE CONTACT FORMATION FOR NAND DEVICE
Organization Name
Inventor(s)
HsiangYu Lee of Cupertino CA (US)
Pradeep Subrahmanyan of Cupertino CA (US)
Changwoo Sun of San Jose CA (US)
WORDLINE CONTACT FORMATION FOR NAND DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525198 titled 'WORDLINE CONTACT FORMATION FOR NAND DEVICE
Simplified Explanation
The patent application describes a method for forming direct wordline contacts in 3D NAND devices using a multi-layer film stack approach.
Key Features and Innovation
- Formation of contact openings at different etch depths in the first film stack.
- Sacrificial gapfill within the contact openings to facilitate subsequent processing.
- Second film stack with alternating layers to enhance contact formation.
- Second set of contact openings extending to the sacrificial gapfill for improved connectivity.
Potential Applications
This technology can be applied in the semiconductor industry for the production of 3D NAND memory devices.
Problems Solved
- Facilitates the formation of direct wordline contacts in 3D NAND devices.
- Improves connectivity and reliability of the memory devices.
Benefits
- Enhanced performance and reliability of 3D NAND devices.
- Simplified manufacturing process for direct wordline contact formation.
Commercial Applications
The technology can be utilized by semiconductor manufacturers to produce high-performance 3D NAND memory devices, catering to the growing demand for data storage solutions.
Prior Art
Readers can explore prior research on direct wordline contact formation in 3D NAND devices to understand the evolution of this technology.
Frequently Updated Research
Researchers are continually exploring advancements in direct wordline contact formation techniques for 3D NAND devices to enhance memory performance and reliability.
Questions about Direct Wordline Contact Formation
How does direct wordline contact formation impact the performance of 3D NAND devices?
Direct wordline contact formation improves the connectivity and reliability of 3D NAND devices, leading to enhanced performance and data storage capabilities.
What are the key challenges in implementing direct wordline contact formation in semiconductor manufacturing?
Implementing direct wordline contact formation requires precise control over the etching and layer deposition processes to ensure proper contact formation and connectivity.
Original Abstract Submitted
Disclosed are approaches for direct wordline contact formation for 3D NAND devices. One method may include providing a first film stack comprising a first plurality of alternating first layers and second layers, and forming a first plurality of contact openings in the first film stack, wherein each contact opening is formed to a different etch depth. The method may further include forming a sacrificial gapfill within the first plurality of contact openings, and forming a second film stack atop the first film stack, wherein the second film stack comprises a second plurality of alternating first layers and second layers. The method may further include forming a second plurality of contact openings in the second film stack, wherein a first set of contact openings of the second plurality of contact openings extends to the sacrificial gapfill, and removing the sacrificial gapfill from the first plurality of contact openings.