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18522627. METHOD OF REMOVING DEFECT OF MASK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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METHOD OF REMOVING DEFECT OF MASK

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Yoonki Hwang of Suwon-si (KR)

Sanghyeon Lee of Suwon-si (KR)

METHOD OF REMOVING DEFECT OF MASK - A simplified explanation of the abstract

This abstract first appeared for US patent application 18522627 titled 'METHOD OF REMOVING DEFECT OF MASK

The abstract describes a method for removing defects from a mask using an atomic force microscope (AFM) probe profile.

  • Generating a probe profile with characteristics of an AFM probe.
  • Creating a design-based reference image of the defect area by applying the probe profile to a design image of the mask.
  • Obtaining an AFM image of the defect area by scanning it with the AFM probe.
  • Recognizing the defect by comparing the AFM image with the design-based reference image.
  • Removing the defect using the AFM probe.

Potential Applications: - Semiconductor manufacturing - Nanotechnology research - Quality control in mask production

Problems Solved: - Improving defect detection and removal in mask production - Enhancing precision and accuracy in defect identification

Benefits: - Increased efficiency in mask production processes - Higher quality and reliability of masks - Cost savings through improved defect management

Commercial Applications: Title: Advanced Mask Defect Removal Technology This technology can be used in semiconductor fabrication facilities to enhance the quality and reliability of masks, ultimately improving the performance of electronic devices.

Questions about the technology: 1. How does this method compare to traditional defect removal techniques? This method offers higher precision and accuracy in defect identification and removal compared to traditional techniques, leading to improved mask quality.

2. What are the potential cost savings associated with using this technology? By efficiently detecting and removing defects in masks, this technology can help reduce production costs and minimize waste in semiconductor manufacturing processes.


Original Abstract Submitted

A method of removing a defect of a mask may include generating a probe profile, the probe profile including characteristics of a probe of an atomic force microscope (AFM); generating a design-based reference image of a defect area by applying the probe profile to a design image of the defect area of the mask including a location of the defect; obtaining an AFM image of the defect area by scanning the defect area of the mask using the probe of the AFM; recognizing the defect as a recognized defect by comparing the AFM image of the defect area with the design-based reference image; and removing the recognized defect using the probe of the AFM.

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