18519392. SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
Marina Mochizuki of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519392 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, and a gate electrode. The oxide semiconductor layer has a channel region, source and drain regions, and an impurity concentration at the interface with the gate insulating layer.
- The device includes an oxide insulating layer, oxide semiconductor layer, gate insulating layer, and gate electrode.
- The oxide semiconductor layer has a channel region, source, and drain regions.
- The impurity concentration at the interface between the source/drain regions and the gate insulating layer is at least 1x10^18 cm^-3.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronics
Problems Solved
This technology helps in:
- Improving device performance
- Enhancing reliability
Benefits
The benefits of this technology include:
- Increased efficiency
- Better control of device operation
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Industrial automation
Possible Prior Art
One possible prior art could be:
- Similar semiconductor devices with different materials
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance.
What are the potential challenges in scaling up the production of devices using this technology?
This article does not address the potential challenges in scaling up production using this technology.
Original Abstract Submitted
A semiconductor device includes an oxide insulating layer, an oxide semiconductor layer on the oxide insulating layer, a gate insulating layer on and in contact with the oxide semiconductor layer, and a gate electrode on the gate insulating layer. The oxide semiconductor layer includes a channel region overlapping the gate electrode, and source and drain regions that do not overlap the gate electrode. At an interface between the source and drain regions and the gate insulating layer, a concentration of an impurity on a surface of at least one of the source and drain regions is greater than or equal to 1×10cm.