18515610. FILM FORMING METHOD AND FILM FORMING APPARATUS simplified abstract (Tokyo Electron Limited)
FILM FORMING METHOD AND FILM FORMING APPARATUS
Organization Name
Inventor(s)
Yamato Tonegawa of Yamanashi (JP)
FILM FORMING METHOD AND FILM FORMING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18515610 titled 'FILM FORMING METHOD AND FILM FORMING APPARATUS
Simplified Explanation
The film forming method described in the abstract involves supplying borazine-based gas to a substrate, adsorbing the gas to the substrate, and then exposing the substrate to a nitrogen plasma.
- Borazine-based gas is supplied to the substrate
- Borazine-based gas is adsorbed to the substrate
- Substrate is exposed to a nitrogen plasma
Potential Applications
The technology could be applied in the semiconductor industry for thin film deposition processes.
Problems Solved
This technology solves the problem of achieving uniform and high-quality thin films on substrates.
Benefits
The benefits of this technology include improved film quality, increased uniformity, and enhanced adhesion to the substrate.
Potential Commercial Applications
- Semiconductor industry: for thin film deposition processes
Possible Prior Art
There may be prior art related to thin film deposition processes using different gas combinations or plasma treatments.
Unanswered Questions
How does this method compare to traditional thin film deposition techniques?
This article does not provide a direct comparison to traditional methods.
What are the specific properties of the thin films produced using this method?
The article does not detail the specific properties of the thin films produced.
Original Abstract Submitted
A film forming method includes performing a process including a) and b) a plurality of times, with a) being performed before b) in the process: a) supplying borazine-based gas to a substrate, thereby adsorbing the borazine-based gas to the substrate and b) exposing the substrate to a nitrogen plasma.