18512600. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
IMAGE SENSOR
Organization Name
Inventor(s)
Jonghyeon Noh of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512600 titled 'IMAGE SENSOR
The abstract describes an image sensor with a pixel isolation structure that includes a dielectric layer, semiconductor patterns with dopants, and insulating layers, all contributing to the photoelectric conversion process.
- The image sensor includes a pixel isolation trench that defines the unit pixel region.
- The pixel isolation structure within the trench consists of a dielectric layer, semiconductor patterns with dopants, and insulating layers.
- The photoelectric conversion region is overlapped by the insulating layer on the first semiconductor pattern.
- The doped region on the outer wall of the pixel isolation structure enhances the photoelectric conversion process.
- The structure allows for efficient photoelectric conversion and isolation of individual pixels.
Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices
Problems Solved: - Improved photoelectric conversion efficiency - Enhanced pixel isolation for better image quality
Benefits: - Higher quality images - Increased sensitivity to light - Better performance in low-light conditions
Commercial Applications: Title: Advanced Image Sensors for High-Resolution Cameras This technology can be used in high-end digital cameras, security cameras, and medical imaging equipment, enhancing image quality and performance in various applications.
Questions about Image Sensor Technology: 1. How does the pixel isolation structure improve photoelectric conversion efficiency? 2. What are the potential drawbacks of using this advanced image sensor technology?
Frequently Updated Research: Researchers are constantly exploring new materials and designs to further enhance image sensor technology, focusing on improving sensitivity, resolution, and overall performance.
Original Abstract Submitted
An image sensor may include a substrate; a unit pixel region including a photoelectric conversion region; a pixel isolation trench defining the unit pixel region, and extending in a first and a second horizontal direction; and a pixel isolation structure in the pixel isolation trench, wherein the pixel isolation structure includes a dielectric layer on an inner wall of the pixel isolation trench; a first semiconductor pattern on the dielectric layer and including a first dopant; a first insulating layer on a first portion of the first semiconductor pattern overlapping the photoelectric conversion region; a second semiconductor pattern on a second portion of the first semiconductor pattern not overlapping with the photoelectric conversion region, wherein the photoelectric conversion region includes a doped region on an outer wall of the pixel isolation structure, and the doped region includes the first dopant.