18511023. METHOD OF FORMING ACTIVE REGION OF SEMICONDUCTOR DEVICE (NANYA TECHNOLOGY CORPORATION)
METHOD OF FORMING ACTIVE REGION OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
JUNG-TZU Peng of TAOYUAN CITY (TW)
METHOD OF FORMING ACTIVE REGION OF SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18511023 titled 'METHOD OF FORMING ACTIVE REGION OF SEMICONDUCTOR DEVICE
Original Abstract Submitted
A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction; forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction; patterning the plurality of second mask layers to form a cut pattern; forming a first aperture modification layer on the cut pattern to define a plurality of first openings overlapping the plurality of first mask layers along a third direction substantially orthogonal to the first direction and the second direction; patterning the plurality of first mask layers to form an active region definition pattern; and patterning the substrate to define an active region by the active region definition pattern.
