18509539. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18509539 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of various structures including spacers made of different materials to enhance performance and functionality.
- The device features a gate structure, a bit line structure with a first metal, and multiple spacers made of oxides and nitride on the sidewalls of the structures.
- The first spacer includes an oxide of a second metal with a lower ionization energy compared to the first metal in the bit line structure.
- The second spacer is made of an oxide of a third metal, while the third spacer consists of a nitride material.
- Additional spacers, such as the fourth, fifth, and sixth spacers, are stacked in a horizontal direction to further improve the device's capabilities.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be used in the development of high-performance integrated circuits and memory devices.
Problems Solved: - The technology addresses the need for improved performance and functionality in semiconductor devices. - It helps in enhancing the efficiency and reliability of electronic components.
Benefits: - Increased performance and functionality of semiconductor devices. - Enhanced reliability and efficiency in electronic applications.
Commercial Applications: - The technology can be utilized in the production of advanced electronic devices for consumer electronics, telecommunications, and computing industries.
Prior Art: - Further research is needed to determine specific prior art related to this innovative semiconductor device technology.
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device technology to leverage the benefits of this innovation.
Questions about Semiconductor Device Technology: 1. How does the use of different metal oxides and nitride in the spacers improve the performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production of semiconductor devices?
Original Abstract Submitted
The semiconductor device includes an active pattern; a gate structure in an upper portion of the active pattern; a bit line structure on the active pattern, the bit line structure including a first metal; a first spacer on a sidewall of the bit line structure, the first spacer including an oxide of a second metal that has an ionization energy smaller than that of the first metal; a second spacer on an outer sidewall of the first spacer, the second spacer including an oxide of a third metal; a third spacer on a lower portion of an outer sidewall of the second spacer, the third spacer including a nitride; a fourth spacer on an upper portion of the outer sidewall of the second spacer and the third spacer; a fifth spacer and a sixth spacer sequentially stacked in a horizontal direction from an outer sidewall of the fourth spacer.
