18504143. MEMORY DEVICE HAVING REDUCED CIRCUIT AREA (United Microelectronics Corp.)
MEMORY DEVICE HAVING REDUCED CIRCUIT AREA
Organization Name
Inventor(s)
Yan-Jou Chen of Yunlin County TW
Cheng-Tung Huang of Kaohsiung City TW
MEMORY DEVICE HAVING REDUCED CIRCUIT AREA
This abstract first appeared for US patent application 18504143 titled 'MEMORY DEVICE HAVING REDUCED CIRCUIT AREA
Original Abstract Submitted
A memory device includes a first memory cell, a second memory cell, a word line, a bit line, a first source line and a second source line. The first memory cell includes a control terminal, a data terminal and a source terminal. The first memory cell includes a control terminal, a data terminal and a source terminal. The word line is coupled to the control terminal of the first memory cell and the control terminal of the second memory cell. The bit line is coupled to the data terminal of the first memory cell and the data terminal of the second memory cell. The first source line is coupled to the source terminal of the first memory cell for receiving a first source voltage. The second source line is coupled to the source terminal of the second memory cell for receiving a second source voltage.