18504046. SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR simplified abstract (CANON KABUSHIKI KAISHA)
SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
Organization Name
Inventor(s)
Mineo Shimotsusa of Machida-shi (JP)
Fumihiro Inui of Yokohama-shi (JP)
SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18504046 titled 'SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
Simplified Explanation
The patent application describes a solid-state imaging device with first and second pixel regions, each containing specific components such as photoelectric conversion units, transistors, and isolation portions.
- First pixel region includes photoelectric conversion unit, floating diffusion region, and transferring transistor.
- Second pixel region includes amplifying transistor and resetting transistor.
- First element isolation portion is in the first pixel region, while second element isolation portion is in the second pixel region.
- Insulating film protrusion into semiconductor substrate is smaller in the first element isolation portion compared to the second element isolation portion.
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- Potential Applications
- Digital cameras
- Smartphone cameras
- Surveillance cameras
- Medical imaging devices
- Problems Solved
- Improved image quality
- Enhanced pixel isolation
- Reduced crosstalk between pixels
- Benefits
- Higher resolution images
- Better low-light performance
- Increased sensitivity
- Improved overall image quality
Original Abstract Submitted
A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.