18503019. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18503019 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation:
The patent application describes an integrated circuit device with a unique nanosheet structure on a fin-type active region, surrounded by a gate line and in contact with a source/drain region.
- The device includes a fin-type active region on a substrate.
- A nanosheet is positioned on the top surface of the fin-type active region, separated vertically from the fin top surface.
- A gate line surrounds the nanosheet on the fin-type active region.
- A source/drain region is in contact with the nanosheet.
- The nanosheet consists of a multilayered sheet with a first outer semiconductor sheet, a core semiconductor sheet, and a second outer semiconductor sheet stacked vertically.
Key Features and Innovation:
- Unique nanosheet structure on a fin-type active region.
- Multilayered sheet composition of the nanosheet.
- Vertical separation of the nanosheet from the fin top surface.
- Contact between the source/drain region and the nanosheet.
Potential Applications:
- Advanced semiconductor devices.
- High-performance integrated circuits.
- Next-generation electronics.
Problems Solved:
- Enhanced performance and efficiency of integrated circuits.
- Improved control over semiconductor device operation.
- Increased scalability and miniaturization of electronic components.
Benefits:
- Higher speed and lower power consumption.
- Improved reliability and durability.
- Greater integration density on semiconductor chips.
Commercial Applications:
The technology could be utilized in the development of cutting-edge smartphones, tablets, laptops, and other consumer electronics, as well as in industrial applications such as data centers and telecommunications infrastructure.
Questions about Nanosheet Integrated Circuit Technology:
1. What are the potential implications of this technology on the semiconductor industry? 2. How does the nanosheet structure contribute to the performance of integrated circuits?
Original Abstract Submitted
An integrated circuit device includes a fin-type active region on a substrate, a nanosheet on a fin top surface of the fin-type active region, the nanosheet being apart from the fin top surface of the fin-type active region in a vertical direction, a gate line surrounding the nanosheet on the fin-type active region, and a source/drain region on the fin-type active region, the source/drain region being in contact with the nanosheet, wherein the nanosheet includes a multilayered sheet comprising a first outer semiconductor sheet, a core semiconductor sheet, and a second outer semiconductor sheet, which are sequentially stacked in the vertical direction.
