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18500042. METHOD OF MANUFACTURING LIGHT EMITTING DIODE simplified abstract (Samsung Display Co., Ltd.)

From WikiPatents

METHOD OF MANUFACTURING LIGHT EMITTING DIODE

Organization Name

Samsung Display Co., Ltd.

Inventor(s)

SOOHYUN Park of Yongin-si (KR)

METHOD OF MANUFACTURING LIGHT EMITTING DIODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18500042 titled 'METHOD OF MANUFACTURING LIGHT EMITTING DIODE

The abstract describes a method for manufacturing a light emitting diode using quantum dots.

  • Formation of a first auxiliary layer on a substrate
  • Providing a first emission solution with quantum dots on the first auxiliary layer
  • Heating the first emission solution to form a second emission solution
  • Forming an emission layer by heating the second emission solution
  • Forming a second auxiliary layer on the emission layer

Potential Applications: - LED displays - Lighting applications - Optoelectronic devices

Problems Solved: - Enhancing the efficiency of light emitting diodes - Improving color accuracy in displays

Benefits: - Higher brightness and efficiency - Enhanced color quality - Cost-effective manufacturing process

Commercial Applications: - LED lighting industry - Display technology companies - Electronics manufacturers

Questions about the technology: 1. How does the use of quantum dots improve the performance of the light emitting diode? 2. What are the advantages of using a multi-layered structure in the manufacturing process?

Frequently Updated Research: - Ongoing studies on the optimization of quantum dot properties for LED applications.


Original Abstract Submitted

A light emitting diode is manufactured by forming a first auxiliary layer on a substrate, providing a first emission solution including a quantum dot on the first auxiliary layer, heating the first emission solution to a first temperature to form a second emission solution, forming an emission layer by heating the second emission solution to a second temperature less than the first temperature, and forming a second auxiliary layer on the emission layer.

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