SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME

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SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18499141 titled 'SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure with a p-n junction and a hole for the scanning beam to pass through to a target. The detector also features a top electrode for the p-n junction (anode or cathode) that serves as an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode includes a doped layer and a buried portion beneath it to reduce series resistance without altering the active area. An isolation structure can be formed near the hole's sidewalls to electrically isolate the active area. A method for forming the buried portion of the top electrode is also provided.

Detector used in CD-SEM and review SEM systems
Semiconductor structure with p-n junction and hole for scanning beam
Top electrode for detecting electrons or radiation
Doped layer and buried portion to reduce resistance
Isolation structure for electrical isolation
Method for forming buried portion of top electrode

Potential Applications: - Semiconductor manufacturing - Nanotechnology research - Quality control in microelectronics industry

Problems Solved: - Improved detection capabilities in SEM systems - Enhanced precision in critical dimension measurements

Benefits: - Higher accuracy in scanning electron microscopy - Increased efficiency in semiconductor analysis

Commercial Applications: Title: Advanced Detector Technology for Semiconductor Inspection This technology can be utilized in semiconductor fabrication facilities for quality control and process optimization. It can also be integrated into research institutions for nanotechnology studies and materials analysis.

Questions about Detector Technology: 1. How does the buried portion of the top electrode improve detector performance? The buried portion reduces series resistance, enhancing the detector's sensitivity and accuracy.

2. What is the significance of the isolation structure in the semiconductor structure? The isolation structure ensures that the active area of the detector is electrically isolated from the sidewalls, preventing interference and improving detection precision.

Original Abstract Submitted

The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.