18498813. MULTI-PARAMETER IMPLANTATION FOR MANAGING WAFER DISTORTION (Applied Materials, Inc.)
MULTI-PARAMETER IMPLANTATION FOR MANAGING WAFER DISTORTION
Organization Name
Inventor(s)
Stanislav S. Todorov of Topsfield MA US
Pradeep Subrahmanyan of Cupertino CA US
D. Jeffrey Lischer of Acton MA US
MULTI-PARAMETER IMPLANTATION FOR MANAGING WAFER DISTORTION
This abstract first appeared for US patent application 18498813 titled 'MULTI-PARAMETER IMPLANTATION FOR MANAGING WAFER DISTORTION
Original Abstract Submitted
A a method of stress management in a substrate. The method may include providing a stress compensation layer on a main surface of the substrate; and performing a chained implant procedure to implant a set of ions into the stress compensation layer. The chained implant procedure may include directing a first implant procedure to the substrate, the first implant procedure generating a first damage profile within the stress compensation layer; directing a second implant to the substrate, different from the first implant, wherein a composite damage profile is generated within the stress compensation layer after the second implant, the composite damage profile resulting in a higher stress response ratio than the first damage profile.