18497482. BACK BARRIER INTEGRATION SCHEME FOR GAN DEVICES (STMicroelectronics International N.V.)

BACK BARRIER INTEGRATION SCHEME FOR GAN DEVICES

Organization Name

STMicroelectronics International N.V.

Inventor(s)

Cristina Tringali of Augusta IT

Alessandro Contarino of San Gregorio di Cantania IT

Raffaella Pezzuto of Milano IT

Ferdinando Iucolano of Gravina di Catania IT

Maria Eloisa Castagna of Catania IT

Aurore Constant of Tours IT

BACK BARRIER INTEGRATION SCHEME FOR GAN DEVICES

This abstract first appeared for US patent application 18497482 titled 'BACK BARRIER INTEGRATION SCHEME FOR GAN DEVICES

Original Abstract Submitted

Various embodiments of the present disclosure disclose improved gallium nitride (GaN) power devices and methods of fabrication of such devices. A method for fabricating a GaN device may include providing a semiconductor base material with a first and second side. The semiconductor base material includes a GaN material, a frontside barrier layer, and a backside barrier layer. A pGaN landing is formed on a first region of the semiconductor base material and an ohmic contact is formed on a second region of the semiconductor base material. The ohmic contact includes one or more via contact landing and one or more backside barrier contacts that make direct contact with the backside barrier layer.