18494253. BACKSIDE ISOLATION OF SEMICONDUCTOR STRUCTURES (Taiwan Semiconductor Manufacturing Company, Ltd.)
BACKSIDE ISOLATION OF SEMICONDUCTOR STRUCTURES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
BACKSIDE ISOLATION OF SEMICONDUCTOR STRUCTURES
This abstract first appeared for US patent application 18494253 titled 'BACKSIDE ISOLATION OF SEMICONDUCTOR STRUCTURES
Original Abstract Submitted
Semiconductor structures and methods for fabricating semiconductor structures are provided. A semiconductor structure includes a first fin extending in an X-direction and a second fin parallel to the first fin and distanced from the first fin in a Y-direction perpendicular to the X-direction. Each fin is formed with a first device area and a second device area aligned in the X-direction; an isolation region disposed between the fins; an isolation structure disposed between the device areas in each fin; and an isolation layer disposed under the fins. The isolation region contacts the isolation layer, the isolation structure contacts the isolation layer, and the isolation region contacts the isolation structure to isolate the first fin from the second fin and to isolate the first device area from the second device area in each fin.