18493553. MEMORY DEVICE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
MEMORY DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
MEMORY DEVICE
This abstract first appeared for US patent application 18493553 titled 'MEMORY DEVICE
Original Abstract Submitted
A memory circuit includes a substrate with a front side and a back side opposite the front side. An interconnect structure is situated on or over the substrate and has first and second metal layers and a via electrically connecting the first and second metal layers. A word line driver circuit is configured to output a word line enable signal to a word line of a memory array. The word line driver circuit has an inverter circuit configured to receive a word line signal, and an enable transistor electrically connected to an output of the inverter circuit by a metal line that includes the first metal layer, the second metal layer, and the via.
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Cheng Hung Lee of Hsinchu TW
- Chien-Yu Huang of Hsinchu TW
- Chia-En Huang of Hsinchu TW
- Yen-Chi Chou of Hsinchu TW
- Shao Hsuan Hsu of Hsinchu TW
- Tzu-Chun Lin of Hsinchu TW
- G11C11/418
- G11C5/06
- H01L23/522
- H01L23/528
- H01L27/092
- H01L29/66
- H01L29/78
- H10B10/00
- CPC G11C11/418