18493527. SEMICONDUCTOR WAFER THINNED BY CRACK PROPAGATION (Western Digital Technologies, Inc.)
SEMICONDUCTOR WAFER THINNED BY CRACK PROPAGATION
Organization Name
Western Digital Technologies, Inc.
Inventor(s)
SEMICONDUCTOR WAFER THINNED BY CRACK PROPAGATION
This abstract first appeared for US patent application 18493527 titled 'SEMICONDUCTOR WAFER THINNED BY CRACK PROPAGATION
Original Abstract Submitted
A semiconductor wafer is prepared with the silicon {111} crystalline plane parallel to the major surfaces of the wafer. After preparation of the wafer with the desired {111} crystalline plane orientation, integrated circuit semiconductor dies may be defined in one of the major surfaces of the wafer. Stress defects may then be formed in the wafer in a {111} crystalline plane at a depth corresponding to the final thickness of the wafer. Cracks propagate from the stress defects in the plane of the stress defects, effectively cleaving the wafer in two at the desired finished thickness of the wafer.