18493293. INTERCONNECTION STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
INTERCONNECTION STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Hsiao-Kang Chang of Hsinchu TW
INTERCONNECTION STRUCTURE
This abstract first appeared for US patent application 18493293 titled 'INTERCONNECTION STRUCTURE
Original Abstract Submitted
An interconnection structure is provided to include a substrate, a first metal trench, a boron nitride dielectric, a second metal trench, and a metal via. The substrate is formed with a first metal trench. The boron nitride dielectric is disposed over the substrate. The second metal trench is formed in the boron nitride dielectric. The metal via is disposed to interconnect the first metal trench and the second metal trench.
Categories:
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Chi-Lin Teng of Hsinchu TW
- Gary Liu of Hsinchu TW
- Ting-Ya Lo of Hsinchu TW
- Yen-Ju Wu of Hsinchu TW
- Shao-Kuan Lee of Hsinchu TW
- Kuang-Wei Yang of Hsinchu TW
- Hsin-Yen Huang of Hsinchu TW
- Hsiao-Kang Chang of Hsinchu TW
- H01L23/522
- H01L21/768
- H01L23/532
- CPC H01L23/5226