18493049. SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF (NANYA TECHNOLOGY CORPORATION)
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
Organization Name
Inventor(s)
Yu Hua Liu of New Taipei City TW
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
This abstract first appeared for US patent application 18493049 titled 'SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate and a gate structure. The semiconductor substrate has source/drain regions and a channel region between the source/drain regions. The gate structure is over the channel region of the semiconductor substrate. The gate structure includes an interfacial layer, a zirconium-containing dielectric layer, and a gate electrode. The zirconium-containing dielectric layer is over the interfacial layer and is in tetragonal-phase. The gate electrode is over the zirconium-containing dielectric layer.