18488085. NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE
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NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18488085 titled 'NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE
The present disclosure introduces a nitride semiconductor element with a bidirectional Zener diode.
- The nitride semiconductor element consists of a semiconductor substrate with an active region and a peripheral region.
- A nitride semiconductor layer is formed in the active region to create a transistor, with source and drain electrodes in contact with the layer.
- A gate electrode is positioned between the source and drain electrodes, while a first electrode on the substrate lower surface connects to the source electrode.
- The bidirectional Zener diode is integrated into the peripheral region and linked to the first electrode.
Potential Applications: - This technology can be used in the development of high-performance electronic devices. - It may find applications in power electronics, telecommunications, and automotive industries.
Problems Solved: - Enhances the efficiency and performance of semiconductor devices. - Provides bidirectional Zener diode functionality in a nitride semiconductor element.
Benefits: - Improved functionality and performance of electronic devices. - Enhanced reliability and stability in semiconductor applications.
Commercial Applications: Title: Nitride Semiconductor Element with Bidirectional Zener Diode for Advanced Electronics This technology can be utilized in the production of advanced electronic devices, leading to improved performance and reliability. It has the potential to impact various industries, including telecommunications, automotive, and power electronics.
Questions about Nitride Semiconductor Element with Bidirectional Zener Diode: 1. How does the integration of a bidirectional Zener diode enhance the functionality of the nitride semiconductor element? The bidirectional Zener diode provides additional protection and stability to the semiconductor element, improving its overall performance and reliability.
2. What are the key advantages of using a nitride semiconductor element with a bidirectional Zener diode in electronic devices? The integration of a bidirectional Zener diode enhances the protection, efficiency, and reliability of electronic devices, making them suitable for a wide range of applications.
Original Abstract Submitted
The present disclosure provides a nitride semiconductor element. The nitride semiconductor element includes a semiconductor substrate having a substrate upper surface and a substrate lower surface facing opposite to the substrate upper surface, and having an active region and a peripheral region. A nitride semiconductor layer is selectively formed in the active region at the substrate upper surface to form a transistor. A source electrode and a drain electrode are in contact with the nitride semiconductor layer. A gate electrode is disposed between the source electrode and the drain electrode. A first electrode is formed on the substrate lower surface and used to electrically connect to the source electrode. The nitride semiconductor element includes a bidirectional Zener diode formed in the peripheral region and electrically connected to the first electrode.
