18487110. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (UNITED MICROELECTRONICS CORP.)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Wen-Kai Lin of Tainan City (TW)
Sheng-Yuan Hsueh of Tainan City (TW)
Kuo-Hsing Lee of Hsinchu County (TW)
Chih-Kai Kang of Tainan City (TW)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18487110 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate including a fin portion, first and second doped regions having a first conductive type, first and second contacts, and first and second metal silicide layers. The fin portion protrudes from a surface of the substrate. The first doped region is disposed in the fin portion. The second doped region is disposed in the fin portion and connected to the first doped region. A doping concentration of the second doped region is greater than that of the first doped region. The first contact is disposed on the first doped region. The second contact is disposed on the second doped region. The first metal silicide layer is disposed between the first contact and the first doped region. The second metal silicide layer is disposed between the second contact and the second doped region.