18484655. ELECTROSTATIC DISCHARGE PROTECTION DEVICES WITH LOW CAPACITANCE (TEXAS INSTRUMENTS INCORPORATED)
ELECTROSTATIC DISCHARGE PROTECTION DEVICES WITH LOW CAPACITANCE
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Kartikey Mayurkumar Thakar of Rajkot IN
ELECTROSTATIC DISCHARGE PROTECTION DEVICES WITH LOW CAPACITANCE
This abstract first appeared for US patent application 18484655 titled 'ELECTROSTATIC DISCHARGE PROTECTION DEVICES WITH LOW CAPACITANCE
Original Abstract Submitted
Diodes for ESD protection devices are described. The diodes have low capacitance. In an example, a semiconductor device includes a substrate, an n-type epitaxial layer on the n-type substrate in a first region of the n-type substrate, and a p-type epitaxial layer on the n-type epitaxial layer with an interface between the n-type and p-type epitaxial layers. The p-type epitaxial layer has a first concentration of p-type dopants throughout the p-type epitaxial layer. Also, the semiconductor device includes a p-type dopant distribution straddling across the interface, the p-type dopant distribution having a first peak concentration of p-type dopants greater than the first concentration, and an n-type dopant distribution straddling across the interface, the n-type dopant distribution having a second peak concentration of n-type dopants. The second peak concentration is substantially same as the first peak concentration.