18484430. SEMICONDUCTOR POWER DEVICE (Industrial Technology Research Institute)
SEMICONDUCTOR POWER DEVICE
Organization Name
Industrial Technology Research Institute
Inventor(s)
Shin-Yi Huang of Hsinchu County (TW)
Hua-Mao Chen of Tainan City (TW)
Chih-Hung Yen of Hsinchu County (TW)
SEMICONDUCTOR POWER DEVICE
This abstract first appeared for US patent application 18484430 titled 'SEMICONDUCTOR POWER DEVICE
Original Abstract Submitted
A semiconductor power device includes a substrate, a channel layer, a barrier layer, a gate, a source, and a drain. The channel layer is located on the substrate. The barrier layer is located on the channel layer and includes a first region and a second region outside the first region. There is a first compound in the first region and a second compound in the second region. The first compound and the second compound each have an aluminum atom of a different ratio, and the aluminum composition ratio of the first compound is less than the aluminum composition ratio of the second compound. The ratio consists of a plurality of different atoms in the first compound and the second compound.
