SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

TZU PEI Chen of TAIPEI CITY TW

MIN-HSUAN Lu of HSINCHU CITY TW

HAO-HENG Liu of HSINCHU CITY TW

YUTING Cheng of TAOYUAN CITY TW

HSU-KAI Chang of HSINCHU TW

PO-CHIN Chang of TAICHUNG CITY TW

OLIVIA PEI-HUA Lee of HSINCHU COUNTY TW

SHENG-TSUNG Wang of HSINCHU TW

HUAN-CHIEH Su of CHANGHUA COUNTY TW

SUNG-LI Wang of HSINCHU COUNTY TW

PINYEN Lin of ROCHESTER NY US

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

This abstract first appeared for US patent application 18484419 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Original Abstract Submitted

A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate and at least one contact plug. The substrate has an epi-layer. The contact plug is formed on the epi-layer and includes a silicide cap disposed on the epi-layer; a conductive pillar disposed on the silicide cap such that the conductive pillar electrically connects to the epi-layer via the silicide cap; and a hybrid liner. The hybrid liner surrounds the conductive pillar and includes a lower portion abutting the silicide cap and having a nitride material and an upper portion abutting the conductive pillar and having an oxidized nitride material. Due to the hybrid liner, a semiconductor structure with increased capacitance and decreased resistivity can be obtained.