SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS

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SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18482401 titled 'SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS

The patent application describes a method for processing a substrate with a silicon oxide film using a gas mixture containing fluorine-containing gas and basic gas.

The method involves providing a substrate with a silicon oxide film, supplying a gas mixture to etch the film, purging the surface, and repeating the process.
This innovative method allows for efficient and controlled etching of silicon oxide films on substrates.
By using a gas mixture with fluorine-containing gas and basic gas, the method achieves precise and uniform etching results.
The alternating process of supplying the gas mixture and purging the surface ensures thorough and effective substrate processing.
Overall, this method offers a reliable and effective way to etch silicon oxide films on substrates.

Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Microelectronics production

Problems Solved: - Precise and controlled etching of silicon oxide films - Uniformity in substrate processing - Efficiency in thin film deposition processes

Benefits: - Improved substrate processing accuracy - Enhanced thin film deposition control - Increased efficiency in semiconductor manufacturing

Commercial Applications: Title: Advanced Substrate Processing Method for Semiconductor Manufacturing This technology can be utilized in semiconductor manufacturing processes to enhance the efficiency and precision of substrate processing. It has the potential to revolutionize thin film deposition techniques and improve overall production quality.

Questions about the technology: 1. How does this method compare to traditional substrate processing techniques? - This method offers more precise and controlled etching of silicon oxide films compared to traditional techniques. 2. What are the key advantages of using a gas mixture with fluorine-containing gas and basic gas in this process? - The gas mixture allows for efficient and uniform etching of silicon oxide films, leading to improved substrate processing outcomes.

Original Abstract Submitted

A substrate-processing method includes a) providing a substrate including a silicon oxide film on a surface of the substrate, b) supplying a gas mixture to the surface of the substrate, thereby etching the silicon oxide film, the gas mixture including fluorine-containing gas and basic gas, c) purging the surface of the substrate, and d) alternatingly repeating b) and c).