SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 18473185 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

A method includes forming first, second, third, and fourth semiconductive sheets over a substrate and arranged in a vertical direction; forming a first source/drain region between the first and second semiconductive sheets, and a second source/drain region between the third and fourth semiconductive sheets; forming a first gate around each of the first semiconductive sheets, a second gate around each of the second semiconductive sheets, a third gate around each of the third semiconductive sheets, and a fourth gate around each of the fourth semiconductive sheets, wherein the second gate pitch of the third and fourth gates is greater than the first gate pitch of the first and second gates; forming first spacers interleaving with the first semiconductive sheets, and second spacers interleaving with the third semiconductive sheets, wherein the second lateral dimension of the second spacers is greater than the first lateral dimension of the first spacers.