18472329. GATE STRUCTURE OF SEMICONDUCTOR DEVICE (TEXAS INSTRUMENTS INCORPORATED)
GATE STRUCTURE OF SEMICONDUCTOR DEVICE
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Sandeep R. Bahl of Palo Alto CA US
Ujwal Radhakrishna of San Jose CA US
GATE STRUCTURE OF SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18472329 titled 'GATE STRUCTURE OF SEMICONDUCTOR DEVICE
Original Abstract Submitted
The present disclosure generally relates to a conductive layer in a gate structure of a semiconductor device. The conductive layer may be a silicon layer. An example is a semiconductor device. The semiconductor device includes a channel layer, a barrier layer, a gate layer, and a silicon layer. The channel layer is over a semiconductor substrate. The barrier layer is over the channel layer. The gate layer is over the barrier layer. The silicon layer is over and contacts the gate layer.