IMAGE SENSOR

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Yun Ki Lee of Hwaseong-si (KR)

Jung-Saeng Kim of Seoul (KR)

Hyungeun Yoo of Suwon-si (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18470972 titled 'IMAGE SENSOR

Simplified Explanation

The abstract describes an image sensor that consists of a semiconductor layer with two sections, each having a surface facing each other. The semiconductor layer also includes a device isolation layer that defines multiple pixels. On the first surface of the semiconductor layer, there is a first grid pattern over the first section and a light-shield pattern over the second section. The top surface of the first grid pattern is at a lower level than the top surface of the light-shield pattern, and these levels are defined with respect to the first surface of the semiconductor layer.

The patent application describes an image sensor design with a semiconductor layer divided into two sections.
The device isolation layer within the semiconductor layer defines multiple pixels.
A first grid pattern is present on the first section of the semiconductor layer's surface.
A light-shield pattern is present on the second section of the semiconductor layer's surface.
The top surface of the first grid pattern is at a lower level than the top surface of the light-shield pattern.

Potential Applications:

This image sensor technology can be used in digital cameras, smartphones, and other devices that require high-quality image capture.
It can be applied in surveillance systems, medical imaging devices, and automotive cameras.

Problems Solved:

The device isolation layer helps in preventing cross-talk between pixels, ensuring accurate image capture.
The first grid pattern and light-shield pattern enhance the image quality by reducing unwanted light interference.

Benefits:

Improved image quality and accuracy due to the device isolation layer and light-shield pattern.
The design allows for better control of light capture and reduces noise in the captured images.
The technology can lead to smaller and more efficient image sensors, enabling thinner devices and better integration into various products.

Original Abstract Submitted

An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other, a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.