METHOD FOR MANUFACTURING THREE-DIMENSIONAL MEMORY DEVICE

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METHOD FOR MANUFACTURING THREE-DIMENSIONAL MEMORY DEVICE

This abstract first appeared for US patent application 18470420 titled 'METHOD FOR MANUFACTURING THREE-DIMENSIONAL MEMORY DEVICE

Original Abstract Submitted

The present disclosure relates to a method for manufacturing a 3D memory device, and particularly, to a method for manufacturing high capacity and high performance 3D NAND flash memory device. The method includes: alternately stacking sacrificial layers and insulating layers; forming a channel through hole through the sacrificial layers and the insulating layers; lining the channel through hole with an initial blocking layer; and performing an oxidation treatment, for turning the initial blocking layer to a blocking oxide layer. A gas source for the oxidation treatment includes a reaction gas having hydrogen and oxygen, and includes an ionization enhancement gas formed by a first type ionization enhancement gas, a second type ionization enhancement gas or a combination thereof. The first type ionization enhancement gas includes at least one in a group consist of tritium, ozone and HO. The second type ionization enhancement gas includes at least one inert gas.