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18469868. PROTECTION DIODE MATRIX FOR ANTENNA PROTECTION (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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PROTECTION DIODE MATRIX FOR ANTENNA PROTECTION

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

HUIMEI Zhou of Albany NY US

Terence B. Hook of Jericho VT US

Yoo-Mi Lee of Montvale NJ US

FENG Liu of Niskayuna NY US

Chen Zhang of Santa Clara CA US

PROTECTION DIODE MATRIX FOR ANTENNA PROTECTION

This abstract first appeared for US patent application 18469868 titled 'PROTECTION DIODE MATRIX FOR ANTENNA PROTECTION

Original Abstract Submitted

Embodiments are disclosed for a semiconductor structure. The semiconductor structure includes a first nanosheet layer. The first nanosheet layer includes a first channel region, and a heavily doped epitaxial region of a first type. Further, the semiconductor structure includes a second nanosheet layer. The second nanosheet layer includes a second channel region, a heavily doped epitaxial region of a second type disposed above the first nanosheet layer, and a first gate surrounding the first channel region and the second channel region. Additionally, the semiconductor structure includes a protection diode. The protection diode includes a source, a drain, and a second gate. The drain is connected to the first gate, and the second gate is connected to the source.

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