18469613. MEMORY DEVICE AND OPERATING METHOD THEREOF (MACRONIX INTERNATIONAL CO., LTD.)

MEMORY DEVICE AND OPERATING METHOD THEREOF

Organization Name

MACRONIX INTERNATIONAL CO., LTD.

Inventor(s)

Yu-Hsuan Lin of Taichung City TW

Yu-Yu Lin of New Taipei City TW

Feng-Min Lee of Hsinchu City TW

MEMORY DEVICE AND OPERATING METHOD THEREOF

This abstract first appeared for US patent application 18469613 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF

Original Abstract Submitted

A memory device includes a first memory cell performing a logic operation. The first memory cell includes first and second switches. The first switch writes a first weight bit into a first storage node. The second switch generates a first current signal according to the first weight bit and a first input bit. The second switch receives a first bit line signal carrying the first input bit and a first word line signal. A control terminal of the second switch is coupled to the first storage node. When the first input bit has a first logic value, the first bit line signal and the first word line signal has a first voltage level. When the first input bit has a second logic value, the first bit line signal has a second voltage level smaller than the first voltage level.