18469153. SEMICONDUCTOR DEVICE AND METHODS OF FORMATION (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Tzu-Ging Lin of Kaohsiung City TW
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
This abstract first appeared for US patent application 18469153 titled 'SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
Original Abstract Submitted
Continuous polysilicon on oxide diffusion edge (CPODE) processes are described herein in which one or more semiconductor device parameters are tuned to reduce the likelihood of etching of source/drain regions on opposing sides of CPODE structures formed in a semiconductor device, to reduce the likelihood of depth loading in the semiconductor device, and/or to reduce the likelihood of gate deformation in the semiconductor device, among other examples. Thus, the CPODE processes described herein may reduce the likelihood of epitaxial damage to the source/drain regions, may reduce current leakage between the source/drain regions, and/or may reduce the likelihood of threshold voltage shifting for transistors of the semiconductor device. The reduced likelihood of threshold voltage shifting may provide more uniform and/or faster switching speeds for the transistors, more uniform and/or lower power consumption for the transistors, and/or increased device performance for the transistors, among other examples.