18469014. THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES (Taiwan Semiconductor Manufacturing Co., Ltd.)
THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES
This abstract first appeared for US patent application 18469014 titled 'THERMAL DISSIPATION IN SEMICONDUCTOR DEVICES
Original Abstract Submitted
A semiconductor structure can include a first substrate having a frontside and a backside opposite the frontside. The semiconductor structure can include devices on the frontside. The semiconductor structure can include first interconnect structures on the frontside and coupled to the devices. The semiconductor structure can include a heat distribution layer on the frontside and electrically isolated from the first interconnect structures, where the heat distribution layer includes a thermally conductive material. The semiconductor structure can include a second substrate coupled to the first substrate on the frontside. The semiconductor structure can include second interconnect structures on the backside and coupled to the devices.