18466855. MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
Shin-Hung Li of Nantou County (TW)
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
This abstract first appeared for US patent application 18466855 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
Original Abstract Submitted
A manufacturing method of a semiconductor structure including the following steps is disclosed. A definition layer is formed on a substrate. The definition layer includes a first dielectric layer and a second dielectric layer. A first isotropic etching process is performed on the second dielectric layer to form a first opening in the second dielectric layer. A portion of the first opening is located under the patterned photoresist layer. A first anisotropic etching process is performed on the first dielectric layer to form a second opening in the first dielectric layer. The first opening is connected to the second opening to form a third opening. The patterned photoresist layer is removed. An etch back process is performed on the first dielectric layer and the second dielectric layer, so that a sidewall of the definition layer exposed by the third opening is an inclined surface.